LYCOS RETRIEVER 
Flash Memory: Nand Flash Memory
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Actrans Systems, Inc. is a designer and developer of flash memory technology and products that ... offers IP services for embedded and customer specific applications using flash memory and EEPROM IP macros. Actrans' split-gate NAND flash memory technologies utilize a 0.15 and 0.12-micron process for targeted densities ranging from 256 Mbit to 1Gbit. The technology has been validated by Powerchip Semiconductor Corporation (PSC), a licensee of SST's SuperFlash technology and an early investor in Actrans Systems. SST expects to license these split-gate NAND products to PSC and collaborate with PSC to bring these and other higher density products into volume production.
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Lexar Media is a leading marketer and manufacturer of NAND flash and DRAM memory products under the Lexar and Crucial brand names. Lexar Media ... sells flash memory products under the Kodak brand. For more information about Lexar Media, visit http://www.lexar.com/. For more information about Crucial products, visit http://www.crucial.com/, http://www.crucial.com/uk or http://www.crucial.com/eu. Lexar Media, Inc. is a subsidiary of Micron Technology, Inc., and Lexar Media is a division of Micron Europe Limited, a division of Micron Semiconductor Asia Pte. Ltd., and a division of Micron Japan, Ltd.
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Products planned for the new architecture will primarily target data storage applications in the integrated Flash memory markets where customers value differentiated, high-value solutions. The new architecture will expand the current MirrorBit ORNAND portfolio with a new family of solutions at 45nm that require 25 percent fewer mask layers than Spansion's 65nm MirrorBit ORNAND, and support superior quality over floating-gate NAND solutions. MirrorBit ORNAND2 products are expected to be available in early 2009.
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This presentation will help you take full advantage of the many attractive attributes that NAND Flash memory offers. It will address the few design challenges that need to be accounted for and provide techniques for achieving success with this highly reliable, mega-popular memory solution.
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Because of the series connection, a large grid of NAND flash memory cells will occupy only a small fraction of the area of equivalent NOR cells (assuming the same CMOS process resolution, e.g. 130 nm, 90 nm, 65 nm). NAND flash's designers realized that the area of a NAND chip, and ... the cost, could be further reduced by removing the external address and data bus circuitry. Instead, external devices could communicate with NAND flash via sequential-accessed command and data registers, which would internally retrieve and output the necessary data. This design choice made random-access of NAND flash memory impossible, but the goal of NAND flash was to replace hard disks, not to replace ROMs.
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The new NAND flash memory utilizes multi-level cell (MLC) technology that allows two bits of data to be stored in one memory cell, doubling memory capacity. Innovative circuit design techniques were utilized to improve chip area efficiency resulting in an 8Gb chip size that is less than 5 percent larger than the previous generation 4Gb chip on 90 nanometer. At 146 millimeter square, the 8Gb chip has an areal density of 6 billion bits or 3 billion transistors per square centimeter (20 billion transistors per square inch of silicon).
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Nand Flash Memory