LYCOS RETRIEVER 
Bipolar Junction Transistor
built 655 days ago
Bipolar Junction Transistor (BJT) is a Semiconductor device constructed with three doped Semiconductor Regions (Base, Collector and Emitter) separated by two p-n Junctions, Figure 1. The p-n Junction between the Base and the Emitter has a Barrier Voltage (V0) of about 0.6 V, which is an important parameter of a BJT. Unlike the Field Effect Transistor (FET), in which Current is produced only by one type of Charge Carrier (Electrons or Holes), in BJT, Current is produced by both types of Charge Carriers (Electrons and Holes), hence the name Bipolar.
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The Bipolar Junction Transistor (BJT) triggered the revolution in modern solid-state electronics in the 1960's. Although the discrete small-signal BJT has since yielded to the integrated circuit (IC) in economic importance, it lives on in the form of discrete linear and switching power transistors as well as radio-frequency transistors into the microwave region.
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Their work led them first to the point-contact transistor and then to the bipolar junction transistor. Since then, the technology has progressed rapidly. The development of a planar process yielded the first circuits on a chip and for a decade, bipolar transistor operational amplifiers and digital TTL circuits were the workhorses of any circuit designer.
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The Junction transistor was the first reliable transistor. It was invented by William Shockley who was a co-inventor of the original point contact transistor. The point contact transistor was difficult to produce and was somewhat variable in its operating characteristics. The Junction’s solid construction was the key factor in stabilizing the operating characteristics of the transistor.
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It was on December 23 1947, the demonstration by Walter H. Brattain and John Bardeen in Bell Telephone Labs introduced the Bipolar Junction Transistor. Itsadvantage over Vacuum tubes was imminent , it had no heater element, required less power to operate, it was small and light weight, it required no warming up.
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This bipolar junction transistor model is an adaptation of the integral charge control model of Gummel and Poon. The model automatically simplifies to the simpler Ebers-Moll model when certain parameters are not specified.
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Bipolar Junction Transistor